A SIMPLE KEY FOR GERMANIUM UNVEILED

A Simple Key For Germanium Unveiled

s is the fact with the substrate content. The lattice mismatch results in a significant buildup of pressure Strength in Ge layers epitaxially grown on Si. This strain Strength is mostly relieved by two mechanisms: (i) era of lattice dislocations for the interface (misfit dislocations) and (ii) elastic deformation of each the substrate along with th

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